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july 2006 rev 2 1/14 14 STGW40NC60WD n-channel 40a - 600v - to-247 very fast switching powermesh? igbt general features low c res / c ies ratio (no cross conduction susceptibility) high frequency operation very soft ultra fast recovery anti parallel diode description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has designed an advanced family of igbts, the powermesh? igbts, with outstanding performances. the suffix ?w? identifies a family optimized for very high frequency application. applications high frequency inverters, ups motor drivers hf, smps and pfc in both hard switch and resonant topologies welding internal schematic diagram type v ces v ce(sat) (max)@ 25c i c @100c STGW40NC60WD 600v <2.5v 40a to-247 www.st.com order codes part number marking package packaging STGW40NC60WD gw40nc60wd to-247 tube
contents STGW40NC60WD 2/14 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STGW40NC60WD electrical ratings 3/14 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v gs = 0) 600 v i c (1) 1. calculated according to the iterative formula: collector current (continuous) at 25c 70 a i c (1) collector current (continuous) at 100c 40 a i cl (2) 2. v clamp = 480v , tj = 150c, r g = 10 ?, v ge = 15v turn-off soa minimum current 230 a v ge gate-emitter voltage 20 v i f diode rms forward current at t c =25c 15 a p tot total dissipation at t c = 25c 250 w t stg operating junction temperature ? 55 to 150 c t j storage temperature t l maximum lead temperature for soldering purpose (1.6mm from case, for 10sec.) 300 c table 2. thermal resistance symbol parameter value unit rthj-case thermal resistance junction-case max 0.6 c/w rthj-amb thermal resistance junction-ambient max 50 c/w i c t c () t jmax t c ? r thj c ? v cesat max () t c i c , () ------------------------------------------------------------------------------------------------------ =
electrical characteristics STGW40NC60WD 4/14 2 electrical characteristics (t case =25c unless otherwise specified) table 3. static symbol parameter test cond ictions min. typ. max. unit v br(ces) collector-emitter breakdown voltage i c = 1ma, v ge = 0 600 v v ce(sat) collector-emitter saturation voltage v ge = 15v, i c = 30a, tj= 25c v ge = 15v, i c = 30a, tj= 125c 2.1 1.9 2.5 v v v ge(th) gate threshold voltage v ce = v ge , i c = 250a 3.75 5.75 v i ces collector-emitter leakage current (v ce = 0) v ge = max rating,tc=25c v ge = max rating, tc=125c 50 3 a ma i ges gate-emitter leakage current (v ce = 0) v ge = 20v , v ce = 0 100 na g fs forward transconductance v ce = 15v , i c = 30a 20 s table 4. dynamic symbol parameter test cond ictions min. typ. max. unit c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25v, f = 1 mhz, v ge = 0 2900 298 59 pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 390v, i c = 30a, v ge = 15v, (see figure 16) 126 16 46 nc nc nc i cl turn-off soa minimum current v clamp = 480v , tj = 150c r g = 10 ?, v ge = 15v 230 a
STGW40NC60WD electrical characteristics 5/14 table 5. switching on/off (inductive load) symbol parameter test condictions min. typ. max. unit t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 390v, i c = 30a r g = 10 ? , v ge = 15v, tj= 25c (see figure 15) 33 12 260 ns ns a/s t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 390v, i c = 30a r g = 10 ? , v ge = 15v, tj= 125c (see figure 15) 32 14 2300 ns ns a/s t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 390v, i c = 30a, r ge = 10 ? , v ge =15v, t j =25c (see figure 15) 26 168 36 ns ns ns t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 390v, i c = 30a, r ge =10 ? , v ge =15v, tj=125 c (see figure 15) 54 213 67 ns ns ns table 6. switching energy (inductive load) symbol parameter test cond ictions min typ. max unit e on (1) e off (2) e ts 1. eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 eon include diode recovery energy. if the igbt is offered in a packa ge with a co-pak diode, the co-pack diode is used as external diode. igbts & diode are at the same temperature (25c and 125c) 2. turn-off losses include also the tail of the collector current turn-on switching losses turn-off switching losses total switching losses v cc = 390v, i c = 30a r g =10 ? , v ge = 15v, tj= 25c (see figure 15) 302 394 651 j j j e on (1) e off (2) e ts turn-on switching losses turn-off switching losses total switching losses v cc = 390v, i c = 30a r g =10 ? , v ge = 15v, tj= 125c (see figure 15) 553 750 1303 j j j
electrical characteristics STGW40NC60WD 6/14 table 7. collector-emitter diode symbol parameter test cond ictions min typ. max unit v f forward on-voltage if = 3.5a if = 3.5a, tj = 125c 1.4 1.1 1.9 v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current if = 20a, v r = 40 v, t j = 25c, di/dt = 100a/s (see figure 18) 45 56 2.5 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current if = 20a, v r = 40v, di/dt =100a/s, t j =125c (see figure 18) 100 290 5.8 ns nc a
STGW40NC60WD electrical characteristics 7/14 2.1 electrical characteristics (curves) figure 1. output characteristics figure 2. transfer characteristics figure 3. transconductance figure 4. collector-emitter on voltage vs temperature figure 5. collector-emitter on voltage vs collector current figure 6. normalized gate threshold vs temperature
electrical characteristics STGW40NC60WD 8/14 figure 7. normalized breakdown voltage vs temperature figure 8. gate charge vs gate-emitter voltage figure 9. capacitance variations figure 10. switching losses vs temperature figure 11. switching losses vs gate resistance figure 12. switching losses vs collector current
STGW40NC60WD electrical characteristics 9/14 figure 13. thermal impedance figure 14. turn-off soa
test circuit STGW40NC60WD 10/14 3 test circuit figure 15. test circuit for inductive load switching figure 16. gate charge test circuit figure 17. switching waveforms figure 18. diode recovery times waveform
STGW40NC60WD package mechanical data 11/14 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
package mechanical data STGW40NC60WD 12/14 dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 a1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 d 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e5.45 0.214 l 14.20 14.80 0.560 0.582 l1 3.70 4.30 0.14 0.17 l2 18.50 0.728 ?p 3.55 3.65 0.140 0.143 ?r 4.50 5.50 0.177 0.216 s5.50 0.216 to-247 mechanical data
STGW40NC60WD revision history 13/14 5 revision history table 8. revision history date revision changes 8-jun-2006 1 first release 10-jul-2006 2 modified dynamic
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